发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a device having good heat emission properties, by providing a metallic wiring layer on a metallic substrate through an electrically insulating thin ceramic film, forming a part of the wiring layer of a metal which is not wetted by a solder and soldering an electric element thereon. CONSTITUTION:A thin Al2O3 film 2 is provided on a Cu substrate 1, and a wiring layer 3 of a material wettable by solder of Ni or the like is formed thereon in a predetermined pattern. A solder layer 5 is provided only on a region of the Ni layer 3 where a semiconductor element 4 is to be arranged. The element 4 is bonded thereto and connected with a bonding wire 6. Such construction enables heat generated during operation of the device to be dissipated efficiently and enables the device to be highly integrated.
申请公布号 JPS62226633(A) 申请公布日期 1987.10.05
申请号 JP19860070533 申请日期 1986.03.28
申请人 SUMITOMO ELECTRIC IND LTD 发明人 IGARASHI TADASHI;IHARA HIROHIKO
分类号 H01L21/52;H01L23/12;H05K3/24;H05K3/34 主分类号 H01L21/52
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