| 摘要 |
PURPOSE:To contrive the improvement in photosensitive characteristics by forming a metallic electrode on the surface of an amorphous Si layer by cluster ion beam technique and enabling the formation of an electronic barrier between the amorphous Si layer and a back electrode even if aluminum is used for that electrode. CONSTITUTION:A vapor of an evaporated substance 12a in a crucible 12 is made that of 1-10 Torr and that is spouted inside a vacuum chamber 11. Then, the aluminum vapor gets into an over-cooled state by heat insulating expansion and is condensed into a cluster of atoms which is transferred to the transparent substrate 1 side. When passing an ionization part 14, that is ionized by electron shower. Those ionized aluminum ions are deposited on an I-type amorphous Si layer 4 on the substrate 1 by acceleration electrodes 15a and 15b and are diffused in the shallow part near the surface to form an electronic barrier. Thus, the back electrode 5 itself can be a compact structure without defects. |
