| 摘要 |
PURPOSE:To obtain a titled stable semi-insulating substrate which is increased in electric resistance or is small in the rate of the decrease by subjecting a wafer cut out of a GaAs single crystal having a specific concn. of carbon to an annealing treatment. CONSTITUTION:The wafer is cut out of the GaAs single crystal having <=5X10<15> atom/cm<3> concn. of carbon. Such wafer is subjected to the annealing treatment for about 20min at about 850 deg.C in, for example, a gaseous Ar atmosphere to obtain the titled semi-insulating substrate which has 0.8-2 times the ratio of the electric resistance value after annealing of the wafer to the electric resistance value prior to annealing of the wafer, has <=5X10<15>atom/cm<3> concn. of carbon and is suitable for ICs.
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