GAAS SINGLE CRYSTAL WAFER AND ITS PRODUCTION

摘要

PURPOSE:To obtain a titled uniform and natural semi-insulating single crystal in which microscopic defects do not exist by detecting the region where specific luminescence is exhibited from a wafer to be detected cut out of a GaAs single crystal and grinding off the outside peripheral region where lattice defects exist in accordance with the result thereof. CONSTITUTION:The wafer to be detected is cut out of, for example, the front part and tail part of the natural semi-insulating GaAs single crystal grown by an LEC method and such wafer is subjected to investigation of the intra- surface distribution of 1.44eV luminescence at the temp. of liquid He by a photoluminescence method to detect the region where 1.44eV luminescence is exhibited. The outside peripheral region where the lattice defects substituting the As lattice point of the unworked crystal with Ga exist are ground to a circular columnar shape to the diameter at which said region can be removed in accordance with the result of the above-mentioned detection.