| 摘要 |
PURPOSE:To obtain a titled thin film which is suitable for a computer device, higher performance IC, etc., and is laminated and grown with high accuracy by respectively independently and alternately repeatedly blowing a gaseous raw material contg. one kind each of Al and O which are the component elements for sapphire and reactive gas. CONSTITUTION:A substrate 7 consisting of the single crystal of a material having the atomic arrangement and inter-atomic distance resembling to the sapphire is installed in a chamber 1 for producing the thin metallic film, the inside of which is preliminarily evacuated to an ultra vacuum degree of at least 10<-7> Pa order by a vacuum evacuation device 2. The substrate is then heated to 300-1,000 deg.C by a heater 8. The gaseous Al-contg. raw material (e.g.: AlCl3) which is one of the sapphire component elements through a stop valve 5 and a pipe 3 and the O-contg. reactive gas (e.g.: O2) which is another one component element via a stop valve 6 and a pipe 4 are independently introduced into the chamber 1 near to the substrate without mixing these gases and after these gases are alternately and directly blown to the substrate 7, the inside of the chamber is evacuated to a vacuum and such operation is repeated until the thin single crystal sapphire films by the adsorption and reaction for each of the monomolecular layers of the gaseous raw material and reactive gas are laminated and grown on the substrate 7 under supervision by an ion gage 9 and a quadrupole type mass spectrometer 10.
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