| 摘要 |
PURPOSE:To achieve matching between neighboring patterns at junctions parts of each exposure region, by setting a value of each side of and exposure region as a valve obtained by dividing the corresponding side of a semiconductor chip into equal intervals. CONSTITUTION:A pattern to be constituted by an electron beam lithography equipment is sent from a computer 13 to a deflection controlling system 15, and an image is drawn by controlling a deflector 4. In the case of forming a large pattern, pattern connection is executed by moving a stand 5 step-wise. The stand 5 is transferred by driving a motor 10, while the position is measured with accuracy of 0.01mum. A rectangular exposure region which is subjected to repeated exposure in step-wise for the rectangular chip of a semiconductor wafer 6 is set as an equally divided value of the corresponding side of a rectangular chip. According to this constitution, the area of an exposure region can be reduced, and the deflection distortions are decreased. Consequently, patterns can be completely coincided at junction parts of each exposure region.
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