| 摘要 |
PURPOSE:To facilatate manufacturing a semiconductor laser and a light emitting diode with an emitting light of short wavelength by a method wherein 1st layer which is composed of ZnSe layers and ZnTe layers laminated alternately is held between P-type 2nd layer and N-type 3rd layer which made of ZnSe and ZnTe which have larger band gaps than ZnSe and ZnTe of the 1st layer to form double-hetero structures. CONSTITUTION:1st layer 3 is composed of ZnSe layers 2 and ZnTe layers 1 which are laminated alternatery. P-type 2nd layer 4 and N-type 3rd layer 5 are made of ZnSe and ZnTe which have larger band gaps than ZnSe and ZnTe of the 1st layer respectively. Double-hetero structure are formed by holding the 1st layer 3 between the 2nd layer 4 and the 3rd layer 5. For instance, the 1st layer 3 is composed of 400 layers of As-doped P-type ZnTe layers 1 with 6Angstrom thickness and 400 layers of nondoped ZnSe layers 2 with 10Angstrom thickness which are laminated altermately to form a super lattice. The 2nd layer 4 is composed of an As-doped P-type ZnTe layer of 2mum thickness and the 3rd layer 5 is composed of a Ge-doped N-type ZnSe layer of 2mum thickness and the 1st layer is held between the 2nd layer 4 and the 3rd layer 5. In this case, the band gaps of the 1st, 2nd and 3rd layers are 2.2eV, 2.26eV and 2.67 eV respectively. |
