| 摘要 |
PURPOSE:To obtain a radiation proof semiconductor device in which sufficiently long life is provided even under a circumstance of radioactive rays in existence, by piling two or more kinds of insulating films in which electrons are different in mobility from holes. CONSTITUTION:Two or more kinds of insulating films 4 and 5, in which electrons are different in mobility from holes, are piled in a semiconductor device having an insulating film on at least one part of the semiconductor substrate 6 surface. The radiation resistance is further improve by making layer thickness of an insulating film 4 arranged at a semiconductor substrate 6 side particularly 50% or less of the whole insulating film thickness. When at least one of two kinds of the insulating films 4 and 5 is composed of an insulating film having 3X10<17>/cm<2> or more in electron-trap density, the radiation resistance is further improved.
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