| 摘要 |
PURPOSE:To remarkably increase the speed of manufacturing a thin film by making combination use of ion implantation of high energy and vapor deposition in the boundary part between a substrate and the thin film and making combination use of ion implantation of low energy and vapor deposition for the greater part of the subsequent film thickness. CONSTITUTION:This apparatus is constituted of a preliminary evacuation chamber 21, a cleaning chamber 23, a high energy implantation chamber 27, a low energy implantation chamber 28, a taking up chamber 29, and a preliminary evacuation chamber 30. The substrate 4 is housed into the preliminary evacuation chamber 21 and after the inside thereof is evacuated, a gate valve 22a is opened and the substrate is transferred into the cleaning chamber 23. After the substrate 4 is made movable between the taking up part 24 and a feed part 25, the surface of the substrate 24 is cleaned. The substrate 4 is passed through the high energy implantation chamber 27 and the low energy implantation 28 and is taken up in the taking up part 24 of the taking up chamber 29. The thin film is formed on the substrate 4 by a high energy ion source 1 and electron beam vapor deposition device 3a in the high energy implantation chamber 27 and by a low energy ion source 2 and electron beam vapor deposition device 3b in the low energy implantation chamber 28 during this time.
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