ION SOURCE

摘要

PURPOSE:To efficiently lead ions in high density plasma in an ion source to a target and to attain sputtering by utilizing microwave discharge under conditions during electron cyclotron resonance to generate plasma and by confining the plasma with a mirror field. CONSTITUTION:When an Al film is formed on a substrate 12 with the apparatus of this invention, the plasma generating chamber 1 is evacuated to a prescribed degree of vacuum and gaseous Ar is introduced to regulate the pressure of the gas in the chamber 1. Microwave power, voltage applied to a target 5 and the gradient of a mirror field are specified and Al<+> ions having 20-100eV energy are led out with a grid 4. An Al film can be efficiently formed on the substrate 12 placed under the grid 4 at 50-1000Angstrom /sec rate of deposition.