| 摘要 |
PURPOSE:To obtain a semiconductor laser or a light emitting diode which facilitates blue light smission with high efficiency by a method wherein 1st layer made of N-type ZnSe is held between P-type 2nd layer which have a super lattice structure composed of ZnSe layers and ZnS layers laminated alternately and N-type 3rd layer made of ZnSe and ZnS to form double-hetero junction strutures. CONSTITUTION:1st layer 6 is made of N-type ZnSe. P-type 2nd layer 9 has a larger band gap than the 1st layer 6 and is composed of ZnSe layers 8 and ZnS layers 7 laminated alternately to form a super lattice structure. N-type 3rd layer 10 has a larger band gap that the 1st layer 6 and is made of ZnSe and ZnS. The 1st layer 6 is held between the 2nd layer 9 and the 3rd layer 10 to form double-hetero junction structures. For instance, the 1st layer 6 is composed of a Ga-doped ZnSe layer with 2000 Angstrom thickness. The 2nd layer is composed of 400 layers of nondoped ZnS layers 7 with 50 Angstrom thickness and 400 layers of nondoped ZnSe layers 8 with 50 Angstrom thickness which are alternately laminated to form a supoper lattice. The 3rd layer 10 is composed of a Ga-doped ZnS<0.15>Se<0.85> mixed crystal layer with 2 mum thickness. The 1st layer 6 is held between the 2nd layer 9 and the 3rd layer 10. In this case, the band gaps of the 1st, 2nd and 3rd layers are 2.67 eV, 2.75 eV and 2.87 eV respectively. |
