| 摘要 |
PURPOSE:To facilitate reading a normal signal and a signal whose time base is reversed by using a same device by a method wherein an impurity layer which has the polarity opposite to the polarity of a semiconductor substrate is formed on the substrate and an impurity layer which has the polarity equal to the substrate is formed on it and, at the same time, specific ion implantation regions are provided and gate oxide films and transfer electrodes are formed on them. CONSTITUTION:On a semiconductor sutstrate 2, an impurity layer 1 which has the polarity opposite to the polarity of the substrate 2 is formed and an impurity layer 3 which has the polarity equal to the polarity of the substrate 2 is formed on the impurity layer 1 and, at the same time, ion implantation regions 51 are provided under transfer electrodes 21 24 with an interval of more than one transfer edectrodes for orientation of charge transfer and gate oxide films 26 and 25 and the transfer electrodes 21 24 are formed on them. For instance, if the potential of 2nd phase clock 33 is more positive than the potential of 1st phase clock 32, the potential diagram is high to the right and electrons are transferred to the direction from the electrode 24 to the electrode 21. If the same pulse is applied, the potential diagram for positive holes is low to the right direction and positive holes are transferred to the right direction along which the potential is lowered.
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