发明名称 MULTIVALUED READ ONLY MEMORY
摘要 <p>PURPOSE:To reduce the number of discriminating levels of memory data and to simplify the constitution of a circuit for discriminating the memory data and to reduce an occupied area in a chip by controlling a reference voltage for discriminating the memory data by an address signal. CONSTITUTION:As transistors TR2, TR3 for setting the reference voltage, the TR2 is selected if A=1, the inverse of A=0, and the TR3 is selected if A=0, the inverse of A=1. The gms of the TR1-TR3 are determined so as to be V1<VR1<V2<VR2<V3<VR3<V4. The output of a differential amplifier is considered to be 0 if VR<Vm and 1 if VR>Vm. Herein, for instance, if a memory transistor Tm is T1, Vm is V1 and V1<VR1, so that the output X1 of the differential amplifier is 1. The output X2 of a differential amplifier 5, since the TR2 is selected if A=1, the inverse of A=0, is 1 from V1<VR2, and since the TR3 is selected if A=0, the inverse of A=1, 1 from V1<VR3. Accordingly, the output D is 0, if A=1, the inverse of A=0, and the D=0 is obtained if A=0, the inverse of A=1.</p>
申请公布号 JPS62223896(A) 申请公布日期 1987.10.01
申请号 JP19860067610 申请日期 1986.03.26
申请人 SEIKO EPSON CORP 发明人 MARUYAMA AKIRA
分类号 G11C16/04;G11C11/56 主分类号 G11C16/04
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