发明名称 |
Method for producing at least one pn transition |
摘要 |
The invention relates to a process for producing at least one pn transition, especially in a connection semiconductor. In this case, an n-doped zone and a p-doped zone are produced substantially simultaneously by an implantation step and a subsequent diffusion step. Destruction of the semiconductor surface is avoided by an oxide layer which is generated from a doped spin-on glass.
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申请公布号 |
DE3610157(A1) |
申请公布日期 |
1987.10.01 |
申请号 |
DE19863610157 |
申请日期 |
1986.03.26 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
KOENIG,ULF,DR.-ING.;KUISL,MAX,DR.RER.NAT. |
分类号 |
H01L21/225;(IPC1-7):H01L21/18;H01L21/265;H01L21/34;H01L21/385;H01L21/425 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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