发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To simply and effectively obtain the optimum supply time of a writing voltage to a non-volatile memory means internally even when the frequency of a reference clock signal is changed by setting a writing time by a timer means programmably. CONSTITUTION:The supply time of the writing voltage to an EEPROMDM can be programmably set according to data stored in a register R. Thereby, in the relation of the supply time for the writing voltage required for obtaining a normal data writing state in the EEPROM and the frequency of the reference clock signal CLK, the number of pulses of the reference clock signal CLK required for obtaining the optimum writing time is programmed so as to be stored in the register R according to the frequency of the reference clock signal CLK, thereby, the optimum supply state of the writing voltage can be constantly obtained irrespective of the frequency.</p>
申请公布号 JPS62223897(A) 申请公布日期 1987.10.01
申请号 JP19860065736 申请日期 1986.03.26
申请人 HITACHI LTD 发明人 YAMAURA TADASHI
分类号 G11C17/00;G11C16/02 主分类号 G11C17/00
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