| 摘要 |
PURPOSE:To obtain the titled semiconductor extremely useful as an electronic element material, having improved thermal conductivity, etc., by reacting a mixed gas of an oxygen-containing compound containing O, C and H and a dopant and precipitating. CONSTITUTION:A reaction tube 9 is packed with diamond or a material 12 except the diamond, valves 6-8 are closed and the reaction tube is exhausted to <=about 10<-4>Torr by a high vacuum exhaust device 14. The valves 6 and 8 are opened. As a given amount of a H2 gas as a carrier gas is sent from a carrier gas feeder 1, a given amount of an oxygen-containing compound such as butanol, etc., containing O, C and H as a carbon source is fed from an oxygen-containing compound feeder 2 to the reaction tube. Microwave having given output is sent from a microwave oscillator 11 to the reaction tube and plasma is generated in the reaction tube 9 while controlling gas pressure at given pressure. The valve 7 is successively opened, a given amount of a dopant such as B2H6, etc. is fed from a dopant feeder to the reaction tube, temperature of the substrate 12 is measured by a thermocouple 13, a mixed gas is reacted at a given temperature for a fixed time and the titled semiconductor is precipitated from the gaseous phase on the substrate 12 and grown.
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