| 摘要 |
PURPOSE:To improve the efficiency of the optical extraction of a light-emitting diode manufactured by removing an insulating film existing on an impurity layer in response to the transverse extension section of the impurity layer in heat treatment and increasing the exposed section of the impurity layer. CONSTITUTION:An insulating film 20 is formed onto the whole surface of an epitaxial layer 11 shaped onto a substrate 10, and an opening window 21 in width 1 is formed to the insulating film 20. An impurity is introduced to the surface of the epitaxial layer 11 from the window, and an impurity layer 30 is shaped through heat treatment. Since the impurity layer 30 transversely extends in response to diffusion depth on said heat treatment, the diffusion width of the impurity layer 30 is increased to W2 and made larger than the width W1 of the opening window 21. The insulating film 20 is removed only by a section corresponding to the transverse extension section of the impurity layer 30 in order to eliminate the trouble, and the width of the opening window 21 is broadened to W1' from W1. Accordingly, the whole surface of the impurity layer 30 can be used as an optical extraction surface, thus improving the efficiency of optical extraction. |
