| 摘要 |
<p>PURPOSE:To write data without turning an MOS transistor OFF by implanting ions into one part on the plane of a pattern for the MOS transistor in order to vary threshold voltage. CONSTITUTION:A pattern in which an MOS transistor on the lower side of a contact-hole conducting a connection with an Al wiring 1 is brought to the state, in which no ion is implanted, and ions are not implanted into the peripheral section of the MOS transistor on the upper side of the contact hole is adopted. Consequently, data can be written as the change of the channel width of the stable MOS transistor even when there is positioning displacement among stepped sections 2 in an oxide film isolating the MOS transistor and ion implanting mask patterns 5. The reading of data can be detected by bringing the inversion potential of a sense amplifier to the intermediate potential of first and second potential by MOS transistors 11, 12 constituting a sense amplifier.</p> |
