发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To prevent a first-in first-out (FIFO) memory from being delayed in a start and a reset time, by designating a part of memory cell groups including address 0 as a static memory. CONSTITUTION:As for the FIFO memory, addresses from an address 0 to an address (a) are constituted of static memories 1, and residual addresses after an address (a+1), of cell groups of dynamic cells 2 and 3. Therefore, in a reset time from an optional address, a signal is read and outputted instantly from a cell 1, and in the preceding read time, a preparation for the address (a+1), etc., is completed, and an access delay due to the dynamic cell in case of selecting, in prevented. As a result, the delay in the start and reset time can be prevented, and the fast and large capacity of memory can be realized.</p>
申请公布号 JPS62222487(A) 申请公布日期 1987.09.30
申请号 JP19860064364 申请日期 1986.03.20
申请人 NEC CORP;NEC IC MICROCOMPUT SYST LTD 发明人 WATABE HIROSHI;NISHIKAWA YASUSHI
分类号 G11C7/00;G11C11/34;G11C11/401;G11C11/41 主分类号 G11C7/00
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