| 摘要 |
PURPOSE:To make possible the radiation of an ion beam even on the side wall of the recession of holes or grooves etc. provided on the surface of a wafer to perform a process such as ion implantation by supporting a holder rotatable around two orthogonal axes with a supporting mechanism. CONSTITUTION:A supporting mechanism is attached to the vacuum envelope 8 rotatable in the direction indicated by the arrow C with axes 14a and 14b, and a holder 12 is provided on a frame 14 attached to the axes 14a and 14b. And this holder 12 is attached to the frame 14 rotatable in the direction indicated by the arrow D with axes 12a and 12b. Thereby the holder 12 is supported freely tiltable in any direction and movable in precession around the central point O of the surface of the wafer. Thus although the ion beam 6 is fixed it becomes to be radiated on the wafer as if it moved in precession for the surface of the wafer. Therefore the ion beam can be radiated even on the side wall of the recession of holes or grooves etc. provided on the surface of the wafer.
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