| 摘要 |
<p>The invention comprises a method of, and apparatus for, measuring the orientation error in a single crystal. An X-ray beam is reflected from the surface of the crystal while it is rotated, and the orientation error is determined from the figure traced at a detector by the reflected beam. The orientation error may be calculated from the major axes of the traced figure, or, if the X-ray beam contains a characteristic line, from the separation of the two bright spots produced in the traced figure.</p> |
