发明名称 Preservation of surface features on semiconductor surfaces.
摘要 <p>The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors is preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru or Rh). DFB-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.</p>
申请公布号 EP0239329(A2) 申请公布日期 1987.09.30
申请号 EP19870302410 申请日期 1987.03.20
申请人 AT&T CORP. 发明人 WILT, DANIEL PAUL
分类号 H01L21/20;H01L21/208;H01L21/324;H01L33/00;H01S5/00;H01S5/028;H01S5/12;H01S5/227;H01S5/323 主分类号 H01L21/20
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