发明名称 |
Field-effect transistor. |
摘要 |
<p>A field-effect transistor comprising a semiconductor substrate (11) having source and drain regions (12, 13) and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate (11) and the gate electrode (19). When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate (11).</p> |
申请公布号 |
EP0239368(A2) |
申请公布日期 |
1987.09.30 |
申请号 |
EP19870302544 |
申请日期 |
1987.03.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
GEMMA, NOBUHIRO C/O PATENT DIVISION;MIZUSHIMA, KOICHI C/O PATENT DIVISION;MIURA, AKIRA C/O PATENT DIVISION;AZUMA, MAKOTO C/O PATENT DIVISION;NAKAYAMA, TOSHIO C/O PATENT DIVISION |
分类号 |
H01L29/78;H01L29/43;H01L29/51;H01L51/05;H01L51/30 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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