发明名称 Field-effect transistor.
摘要 <p>A field-effect transistor comprising a semiconductor substrate (11) having source and drain regions (12, 13) and a gate electrode (19), wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate (11) and the gate electrode (19). When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate (11).</p>
申请公布号 EP0239368(A2) 申请公布日期 1987.09.30
申请号 EP19870302544 申请日期 1987.03.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 GEMMA, NOBUHIRO C/O PATENT DIVISION;MIZUSHIMA, KOICHI C/O PATENT DIVISION;MIURA, AKIRA C/O PATENT DIVISION;AZUMA, MAKOTO C/O PATENT DIVISION;NAKAYAMA, TOSHIO C/O PATENT DIVISION
分类号 H01L29/78;H01L29/43;H01L29/51;H01L51/05;H01L51/30 主分类号 H01L29/78
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