| 摘要 |
PURPOSE:To facilitate the mounting of the emitter ground by a method wherein an emitter electrode is formed on the side of the element back surface, and a collector electrode and a base electrode on the side of the front surface. CONSTITUTION:A P type epitaxial layer 10 is formed as the base region B on a substrate 9 made N type. Next, an N<-> type epitaxial layer 13 serving as the collector region C is formed on the layer 10. Then, a P<+> diffusion source 14 is deposited on the layer 13. A base take-out region B' is formed by diffusing the diffusion source 14, and the layer 13 surrounded thereby is made as the collector region C. Besides, an N<+> diffusion source 11 is diffused and made as the emitter region E. An N<+> layer 15 is selectively diffused on the region C. Finally, the emitter electrode 16, collector electrode 18, and base electrode 19 are formed. |
