| 摘要 |
PURPOSE:To give the difference of concentration to the P-layers of an emitter and a collector by a method wherein, after the formation of a PSG film and a nitride film on an Si substrate and then the side etching the PSG film through a window formed in this nitride film, phosphorus vapor-deposition and diffusion are carried out. CONSTITUTION:The PSG film 1 is formed on the Si substrate consisting of an N<-> layer 6 and an N<+> layer 7, and the nitride film 2 and a resist 4 are formed thereon. Next, the window 5 is bored in the film 2 by means of phosphoric acid. Then, the film 1 is side-etched with hydrofluoric acid after removal of the resist 4. With the film 2 as a mask, the phosphorus 8 to form the P<+> layer 9 to serve as the emitter is evaporated. The P<+> layer 9 serving as the emitter is formed by phosphorus 8 diffusion. At that time, the phosphorus is diffused from the film 1 to the layer 6, and accordingly the P<+> layer 10 serving as the collector is formed. |
