| 摘要 |
PURPOSE:To obtain an optical memory material which is short in the time required for the crystallization of the chalcogen glass (erasing time) and has a high response speed, a large number of repetitive using times and high durability by forming a thin film of the chalcogen glass having a specific compsn. on a substrate. CONSTITUTION:The thin film 2 of the chalcogen glass contg. the compsn. expressed by the general formula Tex(GaySe1-y)1-x, 0.6<=x<=0.9, 0.05<=y<=0.3 as the essential component and contg. 0.5-20wt% at least one kind of the element selected from the group consisting of Au, Sn, In, and Ge is formed on the glass substrate 1. Ge among Au, Sn, In, and Ge is more preferable in terms of the number of repetitively usable times of writing and erasing. A paraxylene film 3 is formed on the thin film 2. |
