| 摘要 |
PURPOSE:To make treatment uniform along the entire body of a material to be treated, by forming the flat surface for the supporting surface of a susceptor, and providing protruded parts for positioning the material to be treated. CONSTITUTION:In a CVD apparatus, e.g., a plurality of rotary shafts 9 are formed at an about equal interval in the circumferential direction at the outer peripheral part of a turntable 7. A susceptor 12, which supports a wafer 11 is a material to be treated, is horizontally supported on each rotary shaft 9. The susceptor 12 is arranged so that it is rotated on its axis and made to revolve around the lower edge of a buffer 6. The upper surface, which is the wafer supporting surface of the susceptor, is formed flatly. A plurality of protruded parts 13 are provided on the upper surface of the susceptor 12 so that the wafer 11 can be positioned in a concentric circle pattern. Therefore, a gas stream, which is guided to the directly upper part of the susceptor 12 by the buffer 6, flows on the wafer 11 in the laminar flow state without the effect of the group of the protruded parts 13. The gas is contacted with the entire body of the wafer 11 approximately uniformly owing to the rotation and revolution of the wafer 11. Thus the distribution of the film thickness becomes uniform along the entire body.
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