| 摘要 |
PURPOSE:To obtain stable treating conditions all the time, by providing a heating means at a jig, which is inserted in a furnace, and preventing the decrease in temperature in the furnace due to the jig when a material under treatment is conveyed in the furnace. CONSTITUTION:Impurities are diffused in, e.g., the specified part of the surface of a wafer 3 as a material under treatment. The treated wafer 3 is removed from a wafer holding part 19b. A new wafer 3 is mounted on the holding part 19b. A fork 19 is again inserted in a furnace 5. During the work outside the furnace, the fork 19 is under the state it is heated with an infrared-ray lamp 23 and a heater 25. Therefore, even if the fork is again inserted in a treating space 9, in which a specified temperature condition is maintained, the temperature in the treating space 9, especially in the vicinities of the entrance of the furnace is not decreased. Recovery to a specified soaking region can be performed quickly. Therefore, the always stable temperature condition can be obtained in the furnace. The treating characteristics can be equalized, and the yield rate of the wafer can be improved.
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