发明名称 METHOD AND DEVICE FOR PATTERN FORMATION
摘要 PURPOSE:To prevent a manufacture line from being contaminated with reactive gas supplied to an ion beam irradiated area on a sample by surrounding the supply area of the reactive gas with non-reactive gas. CONSTITUTION:An ion beam generating device 4 is provided above the ion beam irradiated area on the sample 3 and the reactive gas which is supplied to the ion beam irradiated area from a reactive gas supply nozzle 7 is surrounded with nonreactive gas supplied from nonreactive gas supply nozzles 13 and 15 n both upper and lower sides and the surface of the ion beam irradiated area of the sample and discharged by vacuum discharge pumps 11 and 12 together with the nonreactive gas. Consequently, the reaction gas is prevented from leaking to the manufacture line and causing contamination.
申请公布号 JPS62220956(A) 申请公布日期 1987.09.29
申请号 JP19860064036 申请日期 1986.03.24
申请人 HITACHI LTD 发明人 OKAMOTO YOSHIHIKO;TAKEHANA YOICHI
分类号 H01L21/3213;G03F1/00;G03F1/72;G03F1/74;H01L21/027;H01L21/768 主分类号 H01L21/3213
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