| 摘要 |
PURPOSE:To contrive not to increase the leakage current even at the time of injection of a high current and to attain a high optical output and a high efficiency in the titled semiconductor laser by a method wherein the laser is composed of a semiconductor substrate, a first buried layer which has a conductivity type opposite to that of the semiconductor substrate and a band gap energy smaller than that of a second buried layer, a second buried layer having a conductivity type opposite to that of the semiconductor substrate, and a third buried layer having the same conductivity type as that of the semiconductor substrate. CONSTITUTION:This semiconductor laser is constituted of a p-type InP substrate 1, an InGaAsP active layer 2, an n-type InP clad layer 3, an insulating film 6 and electrodes 7 and 8; and an n-type InGaAsP first buried layer 11, which is a semiconductor layer having the opposite conductivity type to the conductivity type of the substrate 1 and has a band gap energy smaller than that of an n-type InP second buried layer 12, is interposed between the substrate 1 and the second buried layer 12. A hetero transistor of a p-n-n-P structure is composed of the substrate 1, the buried layers 11 and 12 and a p-type InP third buried layer 13 and the gain is very small. Accordingly, the leakage current can be very lessened even at the time of injection of a high current and a large optical output can be obtained.
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