| 摘要 |
PURPOSE:To remove protruding materials stably, by thinly applying resist on a semiconductor substrate, and performing etching for the optimum time period. CONSTITUTION:Resist 3 is thinly coated on the surface of an SiO2 film, which is provided on a semiconductor substrate 1. Then, protruding materials 2 are projected on the resist 3. Thereafter etching is performed. Then the protruding materials 2 are completely removed. Since the chemical method like the etching is used, breakdown of the protruding material at its base and yield of holes and cracks as in a conventional mechanical removing method of the protruding materials using a scrubber do not occur.
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