| 摘要 |
PURPOSE:To lessen the reverse current as well as to improve the workability and the yield by a method wherein a resin for surface stabilization is provided on a modified layer obtained by implanting ions of more than one kind from among oxygen, nitrogen and carbon ions in the surface of a substrate whereon a p-n junction is exposed. CONSTITUTION:A modified layer 200; which is obtained by implanting ions of more than one kind among oxygen, nitrogen and carbon ions in the surface part of a silicon substrate, whereon a p-n junction is being exposed; is provided and a resin 40 for surface stabilization is provided on the modified layer 200. According to this method, as the modified layer 200 is formed by implanting ions in the exposed p-n junction part 100 and the active surface in action is made to shift into the interior of the silicon substrate, the form of the surface is stabilized, and moreover, the fluctuation of the characteristics is suppressed by applying with the resin 40 on the modified layer, thereby enabling to obtain a highly workable and reliable semiconductor device, whcih is not under influences of the outside such as hot air, etc. |
