| 摘要 |
<p>PURPOSE:To enlarge an etching speed, by cooling a membrane, which is on the opposite side to the one on which a metal film is formed, by a cooling gas to prevent a rise in temperature of the membrane, and by impressing high voltage on a plasma etching electrode. CONSTITUTION:A membrane 3 is mounted on a ring-shaped member 4 made of alumina, and the ring-shaped member 4 is mounted on an electrode 11 by the use of an electrostatic chuck or the like. The electrode 11 is provided with a projecting part in the center and the inside of the electrode 11 is cooled by water. Flow paths 12, through which a gas passes, are formed in the electrode 11, and an He gas is introduced inside these flow paths 12 until a pressure between the membrane 3 and the electrode 11 becomes 0.5-10torr. Thus, when the pressure applied between the membrane 3 and the electrode 11 is made to be 2torr, the membrane 3 is prevented from being heated and deformed even if power impressed between the electrode 11 and the facing one becomes nearly three times compared with the previous one. Therefore, an etching speed of 10 times or more compared with the previous one is obtained, capable of largely reducing the manufacturing processes of an X-ray mask.</p> |
