发明名称 MANUFACTURE OF THREE-DIMENSIONAL IC
摘要 PURPOSE:To manufacture a three-dimensional IC which can be composed of three or more chips and in which acceptable chips can be selected easily and the thickness of the chip can be reduced by a method wherein conductive material posts which are exposed on the back of an element forming surface are utilized as measuring terminals. CONSTITUTION:A plurality of fine holes 4 whose diameters are 1-10mum and whose depths are 30mum are formed in the front surface (element forming surface) 2 of a silicon substrate 1. A conductive material layer 6 is etched back and the fine holes 4 are filled with the conductive material to form conductive material posts 61. Then the back surface of the substrate 1 is cut and polished to expose the posts 61 filling the fine holes 4. A passivation film 11 is selectively removed from the regions corresponding to the conductive material posts 61 and lower contact pads 12 made of conductive material such as aluminum are formed on those regions. The upper contact pads 8 and the lower contact pads 12 are utilized as bumps and a plurality chips are laminated to manufacture a three-dimensional IC.
申请公布号 JPS62219954(A) 申请公布日期 1987.09.28
申请号 JP19860062981 申请日期 1986.03.20
申请人 FUJITSU LTD 发明人 KATO TAKASHI
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/48;H01L27/00 主分类号 H01L23/52
代理机构 代理人
主权项
地址