| 摘要 |
PURPOSE:To save useless deposition as much as possible and realizes increased number of processings per batch by providing a pair of electrode consisting of a first semi-spheric electrode and a second semi-spheric electrode which is larger than said first electrode in the plasma CVD apparatus and also providing the wafer fitting jigs in the side of internal surface of the second semi- spheric electrode. CONSTITUTION:At the external side of internal electrode 11, a semi-spheric carbon or aluminum external electrode 21 having a larger radius is provided concentrically to said electrode 11. At the internal surface thereof, many facings are processed and wafers 22 are set thereto with a spring-shaped holding jig 23. A bolt 36 is removed and an external chamber 32 is taken out. Thereafter, the external electrode 21 is taken out and many wafers 22 is set to the internal surface thereof with the holding jig 23. Next, the gas for reaction is supplied into the internal electrode 11 through the pipe 12 from the gas supply pipe 14 and it is then blown to the reaction chamber 26. Simultaneously, when a high frequency is applied between the external electrode 21 and internal electrode 11 by turning ON the high frequency power supply 25, the gas in the reaction chamber 26 between both electrodes 21 and 11 converted to the plasma.
|
