| 摘要 |
PURPOSE:To enhance an efficiency of doping due to the movement of charges from a-SiNx:H to a-Si:H by determining an optical band gap of the a-SiNx:H to be within a specified range in a thin film of a superlattice structure in which thin films of a-SiNx:H and thin films of a-Si:H are laminated alternately. CONSTITUTION:A number of a-SiNx films 2 and a-Si:H films 3 are laminated alternately on a glass substrate 1 to compose a superlattice structure and the bottom layer and the uppermost layer should be both the a-SiNx:H films 2. A composition of the a-SiNx:H film 2 is so determined that its optical band gap becomes within 2.5-4eV, thereby enhancing an efficiency of doping due to the movement of charges. Also, a desired optical response property can be obtained by varying the thickness of the a-SiNx:H layer within the above range of optical band gap. |
