| 摘要 |
PURPOSE:To shorten the reverse recovery time of a built-in diode without fluctuating the characteristics of an MOSFET by adjusting the reverse recovery time of the built-in diode by irradiating a base body, to which an MOS type semiconductor element is shaped, by electron rays and annealing the base body. CONSTITUTION:The reverse recovery time of a built-in diode is adjusted by irradiating a base body, to which an MOS type semiconductor element is shaped, by electron rays and annealing the base body. It is preferable that the base body is irradiated by electron rays in energy of 1-2MeV and particle number of approximately 1X10<15>/cm<-2> through annealing for approximately 60min at 300-400 deg.C. A poly Si insulating gate 2 is shaped to one main surface of the base body such as an N-type Si semiconductor base body 1, P diffusion 3 and N<+> diffusion 4 are conducted in a self-alignment manner by the gate 2, an Al electrode 6 brought into ohmic-contact with the source 4 is formed, the semiconductor base body 1 is irradiated by electron rays, and annealing treatment is executed, thus adjusting the reverse recovery time of a junction diode D1 between the N base body 1 and the P layer 3. |
