发明名称 PRESSURIZED CONTACT TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve an accuracy of fixing a semiconductor substrate by fixing the semiconductor substrate merely with three sorts of members comprising the semiconductor substrate, an anode main electrode, and a fixed annular ring. CONSTITUTION:Since a direct stacking of three members: i.e. semiconductor substrate 1, fixed annular ring 2, and anode main electrode 5, allows an inwall 32 of the fixed annular ring 2 to fix a sidewall 31 of metal plate 12, and a sidewall 33 of anode main electrode 5, the above structure interrupts a parallel movement of the semiconductor substrate 1. Furthermore, a projecting part 22 of the fixed annular ring 2 is so fitted into a space formed between a project ing part 21 of the metal plate 12 and the recess part 23 of the anode main electrode 5 that such a configuration prevents the semiconductor substrate 1 from rotating.
申请公布号 JPS62219627(A) 申请公布日期 1987.09.26
申请号 JP19860060545 申请日期 1986.03.20
申请人 HITACHI LTD 发明人 NONOYAMA SHIGEHARU;AKABANE KATSUMI;SAKAGAMI TADASHI
分类号 H01L21/52 主分类号 H01L21/52
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