| 摘要 |
PURPOSE:To prevent the corrosion of aluminum, to lower the accuracy of mask positioning in case of the formation of an aluminum electrode and to facilitate a design and manufacture by constituting a barrier layer interposed between a semiconductor region and the aluminum electrode of a base metal or a silicide thereof in a contact section. CONSTITUTION:A barrier layer 4 formed in a contact section between a semiconductor region 6 and an aluminum electrode 5 is organized of a base metal or a base-metal silicide. It is proper that either of Mo, W, Ti, Ta, Zr, Hf, V, Nb or Cr is used as said base metal. An insulating film 2 consisting of an oxide film such as an silicon oxide film is shaped onto a semiconductor substrate 1 constructing a predetermined element, and a contact hole 3 opening an impurity region 6 is bored to one part of the insulating film 2. An Mo film is applied onto the whole surface, the Mo film is thermally treated to silicify a contact section with the semiconductor substrate 1, and the Mo film not silicified is removed through etching, thus forming the barrier layer 4 composed of a metallic silicide in the contact hole 3, then shaping the aluminum electrode 5 on the layer 4.
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