| 摘要 |
<p>PURPOSE:To stabilize an output from a photoelectric conversion input device for a prolonged time by leaving a sensor using amorphous Si as a photoconductive layer as it is for 2hr in an atmosphere at a temperature lower than a temperature just after preparation or during a process, bringing the dark conductivity of the photoconductive layer to 10<-7>/OMEGAcm or more at room temperature and cooling the sensor. CONSTITUTION:Beams having not more than 750nm wavelength having little heat-ray components are projected on the formation of an a-Si layer or just after the formation of an opposite electrode, and the whole is treated for 2hr, preferably, 30min or more at 200-80 deg.C lower than a substantial maximum temperature during manufacture. The time is determined by a temperature, the effect of treatment, etc., and an atmosphere is not specified. When a V group element gas is added during the vapor-phase formation of a-Si, conductivity on the light and darkness of a-Si is controlled easily. A proper cooling device is added, and the effect of heat treatment to a sensor due to a temperature environment, etc. is prevented. According to such constitution, a device executing stable photoelectric conversion for a pholonged time is obtained even when using the a-Si layer, which has been regarded as improper and dark conductivity thereof just after preparation or just after heat treatment extends over 10<-7>/OMEGAcm or more.</p> |
