| 摘要 |
PURPOSE:To realize a low-costing image sensor capable of reading gradation and having higher performance such as high density or the like and to realize a highly functional a-silicon TFT having high definition and capable of displaying gradation, by overlaying a high-resistance light-blocking film for providing a light-blocking film for preventing deterioration in characteristics due to irradiation of light. CONSTITUTION:After a metal film is deposited on an insulating substrate 1, a common ohmic electrode 2 is provided. Amorphous silicon 3 is then deposited to form a 0.5mum-2mum thick film. After ITO or SnO2 4 for providing a transparent electrode is deposited to form a 1,000Angstrom thick layer, resist 5 is applied and patterned and the structure is etched. Amorphous GaAs:H for providing a high- resistance light-blocking film 6 is deposited to form a 1,000-3,000Angstrom thick layer with the resist 5 left in the place. The amorphous GaAs:H is formed by performing the high-frequency sputtering process within mixed gas of Ar and H2 with a target of polycrystalline GaAs. |
