| 摘要 |
PURPOSE:To form a Y-shaped groove in a semiconductor substrate with good reproducibility, by covering an opening in an etching mask layer with an etching buffer layer, continuously etching the buffer layer and the exposed part of the substrate, and forming the groove in the substrate. CONSTITUTION:An SiO2 film 2 is formed on a semiconductor substrate 1. An opening 3 is formed in the SiO2 film 2. A polysilicon layer 4, which is become an etching buffer layer, is deposited. The polysilicon layer 4 and the exposed part of the substrate 1 are continuously etched, and a groove is formed in the substrate 1. Thus the groove with the Y-shaped cross section can be formed in the substrate 1 with good reproducibility.
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