| 摘要 |
PURPOSE:To prevent the lowering of conductance as well as to suppress the generation of hot carrier on the titled transistor by a method wherein a conductive layer, which comes in contact with a gate electrode, is provided on both side faces of the gate electrode in such a manner that one end face is contacted to a low impurity density diffusion region and the other end face is contacted to the gate electrode through the intermediary of an insulating oxide film. CONSTITUTION:An insulating oxide film SiO2 is formed on a P-type silicon substrate P-Si, and a gate electrode G is formed thereon using doped polysilicon. Then, an oxide film is formed in such a manner that the thickness of the film on the gate electrode G is heavier than the other part, and SiO2 is left on the gate electrode G and both side faces only by performing an etching lightly. Subsequently, an N<-> region is formed in a P-type substrate by implanting ions. Then, N-type doped silicon is grown on the oxide film of the electrode G, and the polysilicon is left on the side face only of the electrode G by performing an etching. After an N<+> region has been formed in the P-type substrate by ion implantation, the whole body is oxidized, a gate PSG (phosphorus silicate glass) is grown, and an Al electrode is formed.
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