| 摘要 |
PURPOSE:To reduce the wiring resistance for cutting down the switch-off delay time as well as to uniform the current distribution for increasing the withstand breakdown voltage by a method wherein the source electrodes on source regions are divided into multiple parts by the metallic wiring layers formed on a gate electrode. CONSTITUTION:P-type base regions 14 in a specified diffusion depth from the main surface are formed in the region 11 of a drain region 10 composed of a semiconductor substrate comprising main surface side and backside respectively with the region 11 and an N<+> region 12 to form N-type source regions 15 in another specified depth from the main surface. A gate electrode 17 is formed mounting on the main surface of region 11 between the regions 14, 14 through the intermediary of an insulating film 16. Furthermore, source electrodes 18 are formed mounting on the source regions 15. Finally, metallic layers 19 are arranged in lattice work connecting to the electrode 17 to divide the electrodes 18 into multiple parts by the wiring layers 19. |
