| 摘要 |
PURPOSE:To make it possible to perform rapid switching of growing gas and to form heterojunction having steep interface distribution, by providing a heating means at a shutter, which shields a molecular beam gas. CONSTITUTION:A shutter plate 5, which shields molecular beam gas, is provided between a gas injecting nozzle 3, which is a gas feeding part in a reaction chamber 1, and a substrate holding part 9. At this, time, a heating means 10 is provided at the shutter 5. Then a growing part is attached to the shutter 5 under the state the shutter 5 is closed. Thus the rapid switching of the growing gas can be performed, and a heterojunction having steep interface distribution can be formed.
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