| 摘要 |
PURPOSE:To obtain a high quality semiconductor device, by forming a polycrystalline semiconductor film, implanting impurities, thereafter patterning the polycrystalline semiconductor film, forming a gate electrode, and thereafter forming source and drain regions. CONSTITUTION:On a P-type Si substrate 1, an SiO2 film 2, a gate SiO2 film 3 and a polycrystalline silicon layer 7 are formed. Then, a resist film 8 is patterned. Phosphorus ions are implanted, and a polycrystalline silicon layer region 9 is formed. Then, boron ions are implanted, and a polycrystalline layer region 11 is formed. Then a resist film 12 is deposited, and patterning is performed. With the film 12 as a mask, the layers 7, 9 and 11 are etched, and gate electrodes 13 and 14 are formed. Arsenic ions are further implanted, and N-type impurity layers 15 as a source and a drain are formed. Then the film 3 is etched.
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