| 摘要 |
PURPOSE:To decrease the disturbance of the inflow reactive gas flow on the top end side of a truncated pyramidal susceptor and to form a thin film having a uniform thickness over the entire part by providing chamfers inclined toward the top end of the susceptor to the outside peripheral angle parts on the top end side of the susceptor. CONSTITUTION:The rotatable truncated pyramidal susceptor 11 is installed in a reaction cylinder 3 and the angle parts between planes 11a on the outside of the susceptor on the top end side which is the end part on the inflow side of the reactive gas are diagonally notched toward the top end of the susceptor 11 to form the chamfers 11b. Many wafers 8 are set on the outside planes 11a of the susceptor 11 having such shape and are heated by an RF coil 7. While the susceptor 11 is kept rotated, the reactive gas is admitted from a nozzle 8 into the reaction cylinder 3 to form thin films on the surfaces of the wafers 8. The susceptor is uniformly heated over the entire length by providing the chamfers 11b and at the same time the disturbance of the reactive gaseous flow is decreased so that the films are formed to a uniform thickness on the wafers 8. The more preferable result is obtd. if chamfers 11c are provided on the bottom end side of the susceptor 11 as well.
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