| 摘要 |
<p>PURPOSE:To enable easy formation of a single crystal silicon layer on a substrate and to increase the size of a display panel by forming once a silicon layer to be made into a single crystal on a substrate having a large area then subjecting the silicon layer to an annealing treatment to change the same to discrete single crystals. CONSTITUTION:A substrate 1 and a substrate 20 are disposed to face each other via a spacer 18. The substrate 20 is brought into tight contact with a spacer 18 and is fixed by the melting and cooling of a low melting glass. The circumference of the substrates is tightly sealed and a liquid crystal 21 is fed into the space between the 1st substrate 1 and the 2nd substrate 20. A liquid crystal panel is thus completed. The 1st display electrode 4, the 2nd display electrode 19 and display dots are formed. The display of the dots is accomplished by, for example, grounding the 2nd display electrode 19 which is a transparent electrode to keep the potential thereof lower than the potential of a collector electrode 3. Electric charge is impressed to the liquid crystal 21 between the 1st electrode 4 joined to the emitter electrode 16 of a transistor selected in this state and the transparent electrode 10 to change the orientation of the liquid crystal 21 and to perform dot display, by which the increase in the size of the liquid crystal panel is made possible.</p> |
