| 摘要 |
For the precise adjustment of the film resistance of thin polycrystalline silicon films, which are produced by deposition from the gas phase, doping by ion implantation and annealing, following the high-temperature annealing (curve B) post-annealing is carried out at lower temperatures (curve A). The process is used for the production of gate materials, resistor materials and connection materials in integrated circuits and permits, in a reversible manner (curve B, curve A), for example, the adjustment of high-resistance film resistors for memory cells. <IMAGE>
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