| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
The invention discloses a compact construction of an n-channel surface MOS source follower in a p-pocket in an n-type substrate. The source is connected to the p-pocket in order to avoid feedback. The drain is connected to the substrate which acts as a supply line. This construction permits manufacturing several output amplifiers with a minimum pitch. The invention is of particular importance for CCD sensors. |
| 申请公布号 |
DE3465553(D1) |
申请公布日期 |
1987.09.24 |
| 申请号 |
DE19843465553 |
申请日期 |
1984.05.07 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
PALS, JAN ALBERTUS;KLINKHAMER, AREND JAN |
| 分类号 |
H01L21/339;H01L27/148;H01L29/762;H01L29/768;(IPC1-7):H01L29/78;H01L27/14 |
主分类号 |
H01L21/339 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
